ONET8551TY
  • image of ONET8551TY

ONET8551TY

Category:
Manufacturer:
Description:
IC TRANSIMPEDANCE 1 CIRC DIESALE
Package:
Packaging:
Tray
RoHS：
YES
Price:
$2.06

Request a Quote

Stock 1800

Not satisfied with the price? Fill in the form below to send a quick RFQ and we will respond promptly.

Similar Models
NL0333DCAE1S-ES
Nisshinbo Micro Devices Inc.
LOW POWER, ZERO-DRIFT, HIGH EMC
NL2333AFAE2S-ES
Nisshinbo Micro Devices Inc.
LOW POWER, ZERO-DRIFT, HIGH EMC
NL2333AFAE2S
Nisshinbo Micro Devices Inc.
LOW POWER, ZERO-DRIFT, HIGH EMC
NL0333DCAE1S
Nisshinbo Micro Devices Inc.
LOW POWER, ZERO-DRIFT, HIGH EMC
MIC2333T-E/MS
Microchip Technology
DUAL, ZERO-DRIFT OP AMP, E TEMP
MIC333T-E/OT
Microchip Technology
SINGLE, ZERO-DRIFT OP AMP, E TEM
MIC333T-E/LTY
Microchip Technology
SINGLE, ZERO-DRIFT OP AMP, E TEM
OPA383DBVR
Texas Instruments
SINGLE, ZERO-DRIFT, MICROPOWER (
INA296B3EDRQ1
Texas Instruments
AEC-Q100, -5V TO 110V, BIDIRECTI
INA241B3EDRQ1
Texas Instruments
AEC-Q100, -4V TO 110V BIDIRECTIO
Specifications
Part Status
Active
Output Type
-
Mounting Type
Surface Mount
Operating Temperature
-40°C ~ 100°C
Number of Circuits
1
Slew Rate
-
Current - Supply
28mA
Package / Case
Die
Voltage - Supply Span (Min)
2.8 V
Amplifier Type
Transimpedance
Supplier Device Package
Diesale
Voltage - Supply Span (Max)
3.63 V
-3db Bandwidth
9 GHz